Experimental Comparison of UTC- and PIN-Photodiodes for Continuous-Wave Terahertz Generation

被引:72
作者
Nellen, S. [1 ]
Ishibashi, T. [2 ]
Deninger, A. [3 ]
Kohlhaas, R. B. [1 ]
Liebermeister, L. [1 ]
Schell, M. [1 ]
Globisch, B. [1 ]
机构
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Einsteinufer 37, D-10587 Berlin, Germany
[2] NTT Elect Techno Corp, Atsugi, Kanagawa 2430198, Japan
[3] TOPTICA Photon AG, Lochhamer Schlag 19, D-82166 Grafelfing, Germany
关键词
Terahertz source; Continuous-wave terahertz (cw THz); Millimeter-wave; Optoelectronics; Photonics; Microwave photonics; Photodiode; Uni-traveling-carrier photodiode (UTC-PD); P-i-n photodiode (PIN-PD); POWER MEASUREMENT; THZ; SPECTROMETER; SYSTEM;
D O I
10.1007/s10762-019-00638-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We carried out an experimental comparison study of the two most established optoelectronic emitters for continuous-wave (cw) terahertz generation: a uni-traveling-carrier photodiode (UTC-PD) and a pin-photodiode (PIN-PD). Both diodes are commercially available and feature a similar package (fiber-pigtailed housings with a hyper-hemispherical silicon lens). We measured the terahertz output as a function of optical illumination power and bias voltage from 50 GHz up to 1 THz, using a precisely calibrated terahertz power detector. We found that both emitters were comparable in their spectral power under the operating conditions specified by the manufacturers. While the PIN-PD turned out to be more robust against varying operating parameters, the UTC-PD showed no saturation of the emitted terahertz power even for 50 mW optical input power. In addition, we compared the terahertz transmission and infrared (IR) blocking ratio of four different filter materials. These filters are a prerequisite for correct measurements of the absolute terahertz power with thermal detectors.
引用
收藏
页码:343 / 354
页数:12
相关论文
共 31 条
[1]   Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application [J].
Bach, HG ;
Umbach, A ;
vanWaasen, S ;
Bertenburg, RM ;
Unterborsch, G .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (02) :418-423
[2]   ULTRAWIDE-BAND LONG-WAVELENGTH P-I-N PHOTODETECTORS [J].
BOWERS, JE ;
BURRUS, CA .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) :1339-1350
[3]   Towards Quality Control in Pharmaceutical Packaging: Screening Folded Boxes for Package Inserts [J].
Brinkmann, S. ;
Vieweg, N. ;
Gaertner, G. ;
Plew, P. ;
Deninger, A. .
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 2017, 38 (03) :339-346
[4]   THz Communications using Photonics and Electronic Devices: the Race to Data-Rate [J].
Ducournau, Guillaume ;
Szriftgiser, Pascal ;
Pavanello, Fabio ;
Peytavit, Emilien ;
Zaknoune, Mohammed ;
Bacquet, Denis ;
Beck, Alexandre ;
Akalin, Tahsin ;
Lampin, Jean-Francois ;
Lampin, Jean-Francois .
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 2015, 36 (02) :198-220
[5]   Absolute terahertz power measurement of a time-domain spectroscopy system [J].
Globisch, Bjoern ;
Dietz, Roman J. B. ;
Goebel, Thorsten ;
Schell, Martin ;
Bohmeyer, Werner ;
Mueller, Ralf ;
Steiger, Andreas .
OPTICS LETTERS, 2015, 40 (15) :3544-3547
[6]   Telecom technology based continuous wave terahertz photomixing system with 105 decibel signal-to-noise ratio and 3.5 terahertz bandwidth [J].
Goebel, Thorsten ;
Stanze, Dennis ;
Globisch, Bjoern ;
Dietz, Roman J. B. ;
Roehle, Helmut ;
Schell, Martin .
OPTICS LETTERS, 2013, 38 (20) :4197-4199
[7]  
Gregory IS, 2014, INT CONF INFRA MILLI
[8]   Self-Heterodyne Spectrometer Using Uni-Traveling-Carrier Photodiodes for Terahertz-Wave Generators and Optoelectronic Mixers [J].
Hisatake, Shintaro ;
Kim, Jae-Young ;
Ajito, Katsuhiro ;
Nagatsuma, Tadao .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2014, 32 (20) :3683-3689
[9]  
Ishibashi T., 1997, OSA Trends in Optics and Photonics Vol.13. Ultrafast Electronics and Optoelectronics, P83
[10]   Unitraveling-Carrier Photodiodes for Terahertz Applications [J].
Ishibashi, Tadao ;
Muramoto, Yoshifumi ;
Yoshimatsu, Toshihide ;
Ito, Hiroshi .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (06) :79-88