Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3

被引：17
|
作者：
Wang, Yan-Feng [2 ]
Wang, Wei [2 ]
Chang, Xiaohui [2 ]
Abbasi, Hans Naeem [2 ]
Zhang, Xiaofan [2 ]
Wang, Ruozheng [2 ]
Wang, Hong-Xing [1 ,2 ]
机构：
[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Inst Wide Band Gap Semicond, Sch Elect & Informat Engn, Xian 710049, Shaanxi, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 2019年 / 99卷
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
H-diamond; MOSFET; YSZ; 2DHG; YTTRIA-STABILIZED ZIRCONIA; INTERFACES; PROFILE;
D O I：
10.1016/j.diamond.2019.107532
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fabrication of single crystal hydrogen-terminated diamond MOSFET with YSZ/Al2O3 bilayer dielectrics has been successfully carried out. The flat band voltage shift and hysteresis voltage were small in the capacitance-voltage curve. The dielectric constant of YSZ/Al(2)O(3 )was calculated, and the fixed and trapped charge densities in dielectrics were deduced based on the capacitance-voltage curve. According to the transfer characteristics curve, on/off ratio and breakdown voltage were extracted. Distinct pinch-off and p-type channel were shown in the output characteristics curve. The effective mobility was evaluated to be 80.4 cm(2) V-1 s(-1) at V-GS = - 1.5 V based on the relation between on-state resistance and 1/vertical bar V-GS-V-TH vertical bar.
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页数：6
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