Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3

Fabrication of single crystal hydrogen-terminated diamond MOSFET with YSZ/Al2O3 bilayer dielectrics has been successfully carried out. The flat band voltage shift and hysteresis voltage were small in the capacitance-voltage curve. The dielectric constant of YSZ/Al(2)O(3 )was calculated, and the fixed and trapped charge densities in dielectrics were deduced based on the capacitance-voltage curve. According to the transfer characteristics curve, on/off ratio and breakdown voltage were extracted. Distinct pinch-off and p-type channel were shown in the output characteristics curve. The effective mobility was evaluated to be 80.4 cm(2) V-1 s(-1) at V-GS = - 1.5 V based on the relation between on-state resistance and 1/vertical bar V-GS-V-TH vertical bar.