Hydrogen effects on the electrical conductivity of pulsed laser deposited ZnO thin films

被引：0
作者：
Song, TK [1 ]
Kim, MH
Kim, SS
Kim, WJ
Park, C
Ko, RK
Song, KJ
机构：
[1] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, Kyungnam, South Korea
[2] Changwon Natl Univ, Dept Phys, Chang Won 641773, Kyungnam, South Korea
[3] Korea Electrotechnol Res Inst, Appl Superconduct Grp, Chang Won 641120, Kyungnam, South Korea
来源：
INTEGRATED FERROELECTRICS | 2005年 / 69卷
关键词：
ZnO; hydrogen; PLD; thin film; conductivity;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Well c-axis oriented 320 nm and 160 nm thick ZnO thin films were deposited with pulsed laser deposition on Pt/Ti/SiO2/Si(100) substrates. Diode characteristics of Au/ZnO/Pt in electrical conductivity were observed. The conductivity in forward bias was sensitive to the hydrogen annealing but almost insensitive in reverse bias. The conductivity of 320 nm thick film in forward bias increased from 6.1 x 10(-5) Omega(-1) cm(-1) in as-deposited film to 3.3 x 10(-3) Omega(-1) cm(-1) in hydrogen annealed one at 200degreesC. The observed dielectric constant 70 was much higher than that of ceramic ZnO. Dielectric anomaly at about 1 kHz was observed and attributed to the space charge.
引用
收藏
页码：113 / 118
页数：6
相关论文
共 10 条
[1]   Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide [J].
Cox, SFJ ;
Davis, EA ;
Cottrell, SP ;
King, PJC ;
Lord, JS ;
Gil, JM ;
Alberto, HV ;
Vilao, RC ;
Duarte, JP ;
de Campos, NA ;
Weidinger, A ;
Lichti, RL ;
Irvine, SJC .
PHYSICAL REVIEW LETTERS, 2001, 86 (12) :2601-2604
[2]   Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films [J].
Fujihara, S ;
Sasaki, C ;
Kimura, T .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) :2109-2112
[3]   Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition [J].
Joseph, M ;
Tabata, H ;
Kawai, T .
APPLIED PHYSICS LETTERS, 1999, 74 (17) :2534-2536
[4]   High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition [J].
Kaidashev, EM ;
Lorenz, M ;
von Wenckstern, H ;
Rahm, A ;
Semmelhack, HC ;
Han, KH ;
Benndorf, G ;
Bundesmann, C ;
Hochmuth, H ;
Grundmann, M .
APPLIED PHYSICS LETTERS, 2003, 82 (22) :3901-3903
[5]   The relationship between the mean dopant-ion radii and conductivity of co-doped ZnO systems, Zn1-x-yMxM′yO (M, M′ = Al, In, Ga, Y) [J].
Kakinuma, K ;
Kanda, K ;
Yamamura, H .
JOURNAL OF MATERIALS SCIENCE, 2003, 38 (01) :7-11
[6]   n-type doping of oxides by hydrogen [J].
Kiliç, Ç ;
Zunger, A .
APPLIED PHYSICS LETTERS, 2002, 81 (01) :73-75
[7]   Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant [J].
Kim, KK ;
Kim, HS ;
Hwang, DK ;
Lim, JH ;
Park, SJ .
APPLIED PHYSICS LETTERS, 2003, 83 (01) :63-65
[8]   Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen [J].
Kim, S ;
Kang, BS ;
Ren, F ;
Ip, K ;
Heo, YW ;
Norton, DP ;
Pearton, SJ .
APPLIED PHYSICS LETTERS, 2004, 84 (10) :1698-1700
[9]   Pulsed-laser deposited ZnO for device applications [J].
King, SL ;
Gardeniers, JGE ;
Boyd, IW .
APPLIED SURFACE SCIENCE, 1996, 96-8 :811-818
[10]   Novel ferroelectricity in II-VI semiconductor ZnO [J].
Onodera, A .
FERROELECTRICS, 2002, 267 :131-137
1