Room temperature spin Kondo effect and intermixing in Co/Cu non-local spin valves

被引:15
作者
Watts, J. D. [1 ,2 ]
Jeong, J. S. [2 ]
O'Brien, L. [2 ,3 ]
Mkhoyan, K. A. [2 ]
Crowell, P. A. [1 ]
Leighton, C. [2 ]
机构
[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA
[3] Univ Liverpool, Dept Phys, Liverpool L69 3BX, Merseyside, England
基金
美国国家科学基金会; 英国工程与自然科学研究理事会;
关键词
MAGNETIC IMPURITY; CU; ACCUMULATION; INJECTION; ALLOYS; METALS; MAGNETORESISTANCE; COPPER; STATES; AL;
D O I
10.1063/1.4984896
中图分类号
O59 [应用物理学];
学科分类号
摘要
The anomalous low temperature suppression of the spin accumulation signal DRNL in non-local spin valves (NLSVs) based on common ferromagnet (FM)/normal metal (N) pairings has recently been shown to result from a manifestation of the Kondo effect. Local magnetic moments in the N due to even minor levels of FM/N interdiffusion depolarize the injected spin current, suppressing the effective spin polarization around and below the Kondo temperature TK. Previous studies have focused on FM/N combinations that happen to have low TK so that Kondo effects occur only well below 300 K. Here, we study NLSVs based on Co/Cu, a materials combination that is not only technologically relevant but also has a high TK, up to 500 K. Despite the negligible equilibrium solubility of Co in Cu, we find clear Kondo effects in both DRNL and Cu resistivity, due to Co/Cu intermixing that we probe via quantitative transmission electron microscopy. Most significantly, under certain conditions the spin Kondo effect suppresses the injected spin polarization even at room temperature, with important technological implications. Studies as a function of the Cu thickness and annealing temperature reveal complex trends in interdiffusion lengths and Kondo effects, which we interpret in terms of the interplay between diffusion kinetics and thermodynamics, as well as the thickness dependence of the Kondo effect. Published by AIP Publishing.
引用
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页数:5
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