A Multi-Level and Multi-Band Class-D CMOS Power Amplifier for the LINC System in the Cognitive Radio Application

被引:27
作者
Hur, Joonhoi [1 ]
Lee, Ockgoo [1 ]
Lee, Chang-Ho [2 ]
Lim, Kyutae [1 ]
Laskar, Joy [1 ]
机构
[1] Georgia Inst Technol, Georgia Elect Design Ctr, Atlanta, GA 30308 USA
[2] Samsung Design Ctr, Atlanta, GA 30308 USA
关键词
Class-D PA; CMOS; discrete power control; LINC; power amplifier (PA);
D O I
10.1109/LMWC.2010.2047532
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, a multi-level and multi-band Class-D CMOS power amplifier (PA) in a standard 0.18 CMOS process is presented. Using multiple PMOS devices with control switches, the proposed PA improves efficiency with the multi-level operation. In order to enable the multi-band operation, the proposed PA employs a tunable series resonator. The measured maximum drain efficiencies were 72% and 70% for the low power mode and high power mode, respectively. The 3 dB bandwidth of the proposed system was from 450 MHz to 730 MHz, which covers the cognitive radio white spectrum standard. The measured EVM using a commercial 16QAM OFDM signal was -34 dB with a LINC system.
引用
收藏
页码:352 / 354
页数:3
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