Recent progress in transparent oxide semiconductors: Materials and device application

被引:577
作者
Hosono, Hideo [1 ]
机构
[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
transparent conductive oxide; oxide; semiconductor;
D O I
10.1016/j.tsf.2006.12.125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reviews our recent research progress on new transparent conductive ox de (TCO) materials and electronic and optoclectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(beta-Ga2O3 ), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO center dot 7AI(2)O(3) - Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in ptype layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials. (C) 2006 Elsevier BN. All rights reserved.
引用
收藏
页码:6000 / 6014
页数:15
相关论文
共 67 条
  • [31] NbO2F:: An oxyfluoride phase with wide band gap and electrochromic properties
    Mizoguchi, H
    Orita, M
    Hirano, M
    Fujitsu, S
    Takeuchi, T
    Hosono, H
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (25) : 4732 - 4734
  • [32] Electronic structure and transport properties in the transparent amorphous oxide semiconductor 2 CdO•GeO2 -: art. no. 035203
    Narushima, S
    Orita, M
    Hirano, M
    Hosono, H
    [J]. PHYSICAL REVIEW B, 2002, 66 (03) : 1 - 8
  • [33] A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes
    Narushima, S
    Mizoguchi, H
    Shimizu, K
    Ueda, K
    Ohta, H
    Hirano, M
    Kamiya, T
    Hosono, H
    [J]. ADVANCED MATERIALS, 2003, 15 (17) : 1409 - 1413
  • [34] Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy
    Nomura, K
    Ohta, H
    Ueda, K
    Kamiya, T
    Orita, M
    Hirano, M
    Suzuki, T
    Honjyo, C
    Ikuhara, Y
    Hosono, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) : 5532 - 5539
  • [35] Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
    Nomura, K
    Ohta, H
    Ueda, K
    Kamiya, T
    Hirano, M
    Hosono, H
    [J]. SCIENCE, 2003, 300 (5623) : 1269 - 1272
  • [36] Amorphous oxide semiconductors for high-performance flexible thin-film transistors
    Nomura, Kenji
    Takagi, Akihiro
    Kamiya, Toshio
    Ohta, Hiromichi
    Hirano, Masahiro
    Hosono, Hideo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (5B): : 4303 - 4308
  • [37] Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition
    Ohta, H
    Orita, M
    Hirano, M
    Tanji, H
    Kawazoe, H
    Hosono, H
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (19) : 2740 - 2742
  • [38] Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel
    Ohta, H
    Kambayashi, T
    Nomura, K
    Hirano, M
    Ishikawa, K
    Takezoe, H
    Hosono, H
    [J]. ADVANCED MATERIALS, 2004, 16 (04) : 312 - +
  • [39] Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO
    Ohta, H
    Kawamura, K
    Orita, M
    Hirano, M
    Sarukura, N
    Hosono, H
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (04) : 475 - 477
  • [40] Application of a transparent conductive substrate with an atomically flat and stepped surface to lateral growth of an organic molecule: Vanadyl phthalocyanine
    Ohta, H
    Kambayashi, T
    Hirano, M
    Hoshi, H
    Ishikawa, K
    Takezoe, H
    Hosono, H
    [J]. ADVANCED MATERIALS, 2003, 15 (15) : 1258 - +