Recent progress in transparent oxide semiconductors: Materials and device application

被引:577
作者
Hosono, Hideo [1 ]
机构
[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
transparent conductive oxide; oxide; semiconductor;
D O I
10.1016/j.tsf.2006.12.125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reviews our recent research progress on new transparent conductive ox de (TCO) materials and electronic and optoclectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(beta-Ga2O3 ), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO center dot 7AI(2)O(3) - Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in ptype layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials. (C) 2006 Elsevier BN. All rights reserved.
引用
收藏
页码:6000 / 6014
页数:15
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