Single-wafer polysilicon engineering for the improvement of over erase in a 0.18-μm floating-gate flash memory

被引：5

作者：

Luoh, T ^{[1
]}

Han, TT ^{[1
]}

Yang, YH ^{[1
]}

Chen, KC ^{[1
]}

Shih, HH ^{[1
]}

Hwang, YL ^{[1
]}

Hsueh, CC ^{[1
]}

Chung, H ^{[1
]}

Pan, S ^{[1
]}

Lu, CY ^{[1
]}

机构：

[1] Macronix Int Corp Ltd, Si Lab, Adv Module Proc Dev, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2003年 / 16卷 / 02期

关键词：

flash memory; grain size; over erase; polysilicon; single-wafer;

D O I：

10.1109/TSM.2003.810937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new polysilicon grain engineering technology for the improvement of over erase in 0.18-mum floating-gate flash memory has been developed with the use of single-wafer polysilicon processing, which makes it practical to use hydrogen as a process variable. The addition of hydrogen in polysilicon deposition significantly alters the reaction kinetics and produces polysilicon thin film of smooth surface, fine and uniformly distributed grains. Such a micrograin polysilicon possesses show excellent high-temperature stability. The benefits of the micrograin polysilicon are to be demonstrated through its improvement in over erase of a 0.18-mum floating-gate flash memory.

引用

页码：155 / 164

页数：10