Large-scale synthesis of high-purity, one-dimensional α-Al2O3 structures

被引:8
作者
Proost, J
Van Boxel, S
机构
[1] Catholic Univ Louvain, Div Mat & Proc Engn, B-1348 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium
关键词
D O I
10.1039/b408631g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanostructures of alpha-Al2O3 were successfully synthesized by simple evaporation of the commercial high-purity oxide powders, followed by vapour condensation onto a sapphire substrate under controlled conditions of supersaturation without the presence of a catalyst. Synthesis was carried out in a specially designed reactor equipped with a laser set-up that allows monitoring of the growth process in situ. Detailed in situ interferometric and high-resolution substrate curvature measurements revealed, for the first time, that the growth of these one-dimensional structures is driven by a mechanical stress, which develops in an initially continuous, two-dimensional layer. This interaction between chemical activity and mechanical stress is shown to provide an important additional parameter to actively control the large-scale synthesis of one-dimensional oxide structures.
引用
收藏
页码:3058 / 3062
页数:5
相关论文
共 33 条
  • [1] Barin I., 2008, Thermochemical Data of Pure Substances, VThird
  • [2] WHISKER GROWTH ON SPUTTERED ALSN (20-WT-PERCENT SN) FILMS
    BERGAUER, A
    BANGERT, H
    EISENMENGERSITTNER, C
    BARNA, PB
    [J]. THIN SOLID FILMS, 1995, 258 (1-2) : 115 - 122
  • [3] GROWTH OF CRYSTAL WHISKERS
    BLAKELY, JM
    JACKSON, KA
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (02) : 428 - &
  • [4] MECHANISM OF WHISKER GROWTH .3. NATURE OF GROWTH SITES
    BRENNER, SS
    SEARS, GW
    [J]. ACTA METALLURGICA, 1956, 4 (03): : 268 - 270
  • [5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
    BURTON, WK
    CABRERA, N
    FRANK, FC
    [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
  • [6] Das G., 2008, CERAM ENG SCI P, V16, P977, DOI 10.1002/9780470314784.ch41
  • [7] STRESSES AND DEFORMATION PROCESSES IN THIN-FILMS ON SUBSTRATES
    DOERNER, MF
    NIX, WD
    [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (03): : 225 - 268
  • [8] TRANSITIONS IN VAPOR-DEPOSITED ALUMINA FROM 300 DEGREES TO 1200 DEGREES C
    DRAGOO, AL
    DIAMOND, JJ
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1967, 50 (11) : 568 - &
  • [9] Temperature-controlled growth of α-Al2O3 nanobelts and nanosheets
    Fang, XS
    Ye, CH
    Peng, XS
    Wang, YH
    Wu, YC
    Zhang, LD
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 2003, 13 (12) : 3040 - 3043
  • [10] Growth of crystalline doped beta-alumina thin films by laser ablation
    Haumesser, PH
    Thery, J
    Daniel, PY
    Laurent, A
    Perriere, J
    GomezSanRoman, R
    PerezCasero, R
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 1997, 7 (09) : 1763 - 1767