Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT)

被引：7
作者：
Lee, Jang Woo [1 ]
Choi, Woo Young [1 ]
机构：
[1] Sogang Univ, Dept Elect Engn, 35 Baekbeom Ro, Seoul 04107, South Korea
来源：
SOLID-STATE ELECTRONICS | 2020年 / 163卷
关键词：
Tunnel field-effect transistor (TFET); Band-to-band tunneling (BTBT); Gate-normal tunneling; Gate-induced source depletion; Negative differential transconductance (NDT); HETEROJUNCTION; FET;
D O I：
10.1016/j.sse.2019.107659
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed. The introduction of the source depletion to the gate-normal TFETs leads to negative differential transconductance. It is also confirmed that the NDT of the proposed gate-normal TFET is successfully enhanced by modulating gate-induced source depletion effects.
引用
收藏
页数：8
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