Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

被引：32

作者：

Francois, T. ^{[1
,2
]}

Grenouillet, L. ^{[1
]}

Coignus, J. ^{[1
]}

Vaxelaire, N. ^{[1
]}

Carabasse, C. ^{[1
]}

Aussenac, F. ^{[1
]}

Chevalliez, S. ^{[1
]}

Slesazeck, S. ^{[3
]}

Richter, C. ^{[3
]}

Chiquet, P. ^{[2
]}

Bocquet, M. ^{[2
]}

Schroeder, U. ^{[3
]}

Mikolajick, T. ^{[3
,4
]}

Gaillard, F. ^{[1
]}

Nowak, E. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

[2] Univ Toulon & Var, Aix Marseille Univ, CNRS, IM2NP, F-13453 Marseille, France

[3] NaMLab GGmbH, Noethnitzer Str 64a, D-01187 Dresden, Germany

[4] Tech Univ Dresden, IHM, D-01062 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 06期

基金：

欧盟地平线“2020”;

关键词：

Perovskite - Zirconium compounds - Ferroelectricity - Silicon compounds - Ferroelectric films - Hafnium oxides - Silicon - Dielectric films;

D O I：

10.1063/5.0035650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scaling of planar HfO2-based ferroelectric capacitors is investigated experimentally by varying the capacitor area within five orders of magnitude, under the scope of a limited thermal budget for crystallization. Both Hf0.5Zr0.5O2 (HZO) and Si-doped HfO2 (HSO)-based metal/ferroelectric/metal capacitors with a 10nm dielectric film thickness and TiN electrodes are demonstrated to be ferroelectric when integrated in a back-end of line (BEOL) of 130nm CMOS technology, with a maximum thermal budget below 500 degrees C. When the area of the ferroelectric capacitors is scaled down from 7850 mu m(2) to 0.28 mu m(2), no degradation of the remanent polarization (2.P-R > 10 mu C/cm(2) for HSO, > 30 mu C/cm(2) for HZO) or of the switching kinetics (down to 100ns at 3V) is observed. Significant improvement of the field cycling endurance is demonstrated upon area scaling, consistent with the reduction of the total number of defects when devices are shrunk. The results pave the way for future BEOL demonstrations in 130nm and more advanced nodes with record endurance similar to perovskite ferroelectrics.

引用

页数：5

共 29 条

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