Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors

被引：23

作者：

Huang, Zhihong ^{[1
]}

Oh, Jungwoo

Banerjee, Sanjay K.

Campbell, Joe C.

机构：

[1] Univ Texas, Coll Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] SEMATECH, Front End Proc, Austin, TX 78741 USA

[3] Univ Texas, Coll Engn, Dept Elect & Comp Engn, Austin, TX 78712 USA

[4] Univ Virginia, Dept Elect & Comp Engn, Sch Engn & Appl Sci, Charlottesville, VA 22904 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 3-4期

关键词：

germanium; photodetector; photodiode; silicon;

D O I：

10.1109/JQE.2006.890395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effectiveness of thin SiGe buffer layers in terminating threading dislocations and reducing photodiode dark current for Ge epitaxially grown on Si (001) has been investigated. The structural morphology of the films was studied by atomic force microscopy and transmission electron microscopy. The dark current of Ge on Si photodiodes can be reduced by over an order of magnitude by incorporating two different composition SiGe buffer layers. The origin of dark current and the effectiveness of thermal annealing the SiGe layers were also studied.

引用

页码：238 / 242

页数：5

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