Andreev reflection measurements of spin polarization

被引:68
作者
Chalsani, P. [1 ]
Upadhyay, S. K. [1 ]
Ozatay, O. [1 ]
Buhrman, R. A. [1 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
关键词
D O I
10.1103/PhysRevB.75.094417
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We discuss aspects of Andreev reflection (AR) measurements in normal metal-superconductor (N-S) and ferromagnet-superconductor (F-S) devices. We describe the analytical model used to quantify spin polarization from the conductance measurements and discuss the validity of this simple model using parabolic bands as simple surrogates for real band structures. We present (AR) measurements of spin polarization in a Cu-Pt-Pb and Co-Pt-Pb lithographically fabricated nanocontact systems where a scattering layer of has been deliberately added to the interface to enable the study of the effect of pair-breaking scattering on AR conductance and spin polarization. We compare these results to the previously published results from clean Cu-Pb and Co-Pb devices and argue that the measurements in devices with the Pt layer can be explained by the presence of inelastic-scattering-induced pair-breaking effects. We modify the analytical model to include this effect and show that in some instances, it may be impossible to distinguish between the effects of a finite spin polarization and inelastic scattering. This has implications for AR measurements of spin polarization at disordered or poorly formed F-S interfaces.
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页数:16
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