Properties of MgB2 thin films with carbon doping

被引:82
|
作者
Pogrebnyakov, AV
Xi, XX
Redwing, JM
Vaithyanathan, V
Schlom, DG
Soukiassian, A
Mi, SB
Jia, CL
Giencke, JE
Eom, CB
Chen, J
Hu, YF
Cui, Y
Li, Q
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Penn State Univ, Inst Mat Res, University Pk, PA 16802 USA
[4] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[5] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[6] Univ Wisconsin, Ctr Appl Superconduct, Madison, WI 53706 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1782258
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing precursor metalorganic bis(methylcyclopentadienyl)magnesium was added to the carrier gas to achieve carbon doping. As the amount of carbon in the film increases, the resistivity increases, T-c decreases, and the upper critical field increases dramatically as compared to clean films. The self-field J(c) in the carbon doped film is lower than that in the clean film, but J(c) remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with columnar nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon doping approach can be used to produce MgB2 materials for high magnetic-field applications. (C) 2004 American Institute of Physics.
引用
收藏
页码:2017 / 2019
页数:3
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