The effects of neutron irradiation on gamma sensitivity of linear integrated circuits

被引：22
作者：
Gorelick, JL [1 ]
Ladbury, R
Kanchawa, L
机构：
[1] Boeing Satellite Syst, Los Angeles, CA 90009 USA
[2] GSFC, Orbital Sci, Mt Airy, MD 21771 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期
关键词：
neutron irradiation; total ionizing dose (TID) effects;
D O I：
10.1109/TNS.2004.839245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dozen linear bipolar microcircuits were first irradiated with neutrons then gammas and compared to the same devices exposed to gammas only. The data show that neutron irradiation can affect subsequent total dose behavior. This has significant hardness assurance implications.
引用
收藏
页码：3679 / 3685
页数：7
相关论文
共 9 条
  • [1] Analytical model for proton radiation effects in bipolar devices
    Barnaby, HJ
    Smith, SK
    Schrimpf, RD
    Fleetwood, DM
    Pease, RL
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) : 2643 - 2649
  • [2] Proton radiation response mechanisms in bipolar analog circuits
    Barnaby, HJ
    Schrimpf, RD
    Sternberg, AL
    Berthe, V
    Cirba, CR
    Pease, RL
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 2074 - 2080
  • [3] Origins of total-dose response variability in linear bipolar microcircuits
    Barnaby, HJ
    Cirba, CR
    Schrimpf, RD
    Fleetwood, DM
    Pease, RL
    Shaneyfelt, MR
    Turflinger, T
    Krieg, JF
    Maher, MC
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) : 2342 - 2349
  • [4] Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response
    Barnaby, HJ
    Schrimpf, RD
    Pease, RL
    Cole, P
    Turflinger, T
    Krieg, J
    Titus, J
    Emily, D
    Gehlhausen, M
    Witczak, SC
    Maher, MC
    Van Nort, D
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) : 1666 - 1673
  • [5] MODELS FOR TOTAL DOSE DEGRADATION OF LINEAR INTEGRATED-CIRCUITS
    JOHNSTON, AH
    PLAAG, RE
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1474 - 1480
  • [6] Proton damage effects in linear integrated circuits
    Rax, BG
    Johnston, AH
    Lee, CI
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) : 2632 - 2637
  • [7] Displacement damage in bipolar linear integrated circuits
    Rax, BG
    Johnston, AH
    Miyahira, T
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) : 1660 - 1665
  • [8] COMPARISON OF NEUTRON, PROTON AND GAMMA-RAY EFFECTS IN SEMICONDUCTOR-DEVICES
    RAYMOND, JP
    PETERSEN, EL
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1622 - 1628
  • [9] 1994, MILITARY HDB, V814
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