A CMOS symmetric self-biased voltage reference

被引:3
作者
Park, Minseon [1 ]
Park, Sung Min [1 ]
机构
[1] Ewha Womans Univ, Dept Elect & Elect Engn, Seoul, South Korea
来源
MICROELECTRONICS JOURNAL | 2018年 / 80卷
关键词
CMOS; Constant-g(m); Modified cascode; PVT variation; Self-biased; Voltage reference;
D O I
10.1016/j.mejo.2018.08.002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a novel CMOS voltage reference circuit named symmetric self-biased voltage reference (SSVR), which enables not only to discard the voltage headroom issue of a conventional constant-g(m) current source and the inevitable need of an extra bias in a modified constant-g(m), current source, but also to maintain stable bias voltages with strong tolerance against significant variations of power supply and temperature. Test chips of the SSVR were implemented by using a 0.11-mu m CMOS process. Measured results demonstrate that the symmetric configuration of the proposed SSVR helps to achieve constant voltage references against the V-DD variation from 0.7 to 1.2V and the temperature variation from -15 degrees C to 125 degrees C. The fabricated chip consumes constant 18.5 mu A currents for 0.7 similar to 1.0-V supply voltages and its core occupies the area of 0.04 x 0.047 mm(2).
引用
收藏
页码:28 / 33
页数:6
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