Synthesis and characterization of urea-doped MgZnO nanoparticles for electronic applications

In this work, we report on the synthesis of nitrogen-doped MgZnO thin films via sol-gel method using urea as a nitrogen source. The effect of nitrogen doping on the physical and optical properties was investigated through FTIR, UV-Vis spectroscopy, XRD, SEM, and TEM techniques. The FTIR spectra confirm the formation of nitrogen-doped MgZnO nanoparticles, while XRD, SEM and TEM revealed the formation of crystalline structure for the ternary alloys with particle size less than 50 nm. The optical properties of the MgZnO:N nanoparticles were analysed using diffused reflectance and UV-Vis spectroscopy. The diffuse reflectance spectra show a strong dependence on urea content in MgZnO which may be due to the pi -> pi* electron transition of nitrogen (2)p(x) to oxygen (2)p(z) sub-shell of non-bonding orbitals. Current density-voltage characteristics of the nitrogen-doped MgZnO ternary alloys were investigated by fabricating a Schottky diode (ITO-MgZnO:N-Al) structure. The J-V characteristics of the Schottky device show a non-ohmic behavior with increase in current density with increased content of urea in MgZnO nanoparticles. Due to improved optical and electronic properties, these nitrogen-doped ternary alloys may play a significant role in micro- and optoelectronic devices.