MMIC wideband low noise amplifier

被引：0

作者：

Luqueze, MA ^{[1
]}

Consonni, D ^{[1
]}

Yamada, CY ^{[1
]}

机构：

[1] Univ Sao Paulo, Escola Politecn, LME, Microelect Lab,Dept Elect Engn, BR-05424970 Sao Paulo, Brazil

来源：

1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS | 1999年

关键词：

MMIC; low-noise amplifier; wideband microwave circuits; PHEMT microwave circuit; microwave package;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work describes the development of a monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) based on a 40 GHz PHEMT (pseudomorphic high electron mobility transistor) GaAs technology. The circuit operates from 16 to 25 GHz band, with gain greater than 14 dB and noise figure lower than 3 dB. The performance of the MMIC amplifier mounted in a commercial ceramic package is also presented.

引用

页码：264 / 266

页数：3