Boron atomic-scale mapping in advanced microelectronics by atom probe tomography

被引：3

作者：

Estivill, Robert ^{[1
,2
,3
,4
]}

Juhel, Marc ^{[1
]}

Servanton, Germain ^{[1
]}

Gregoire, Magali ^{[1
]}

Lorut, Frederic ^{[1
]}

Clement, Laurent ^{[1
]}

Chevalier, Pascal ^{[1
]}

Grenier, Adeline ^{[2
,3
]}

Blavette, Didier ^{[4
]}

机构：

[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

[2] Univ Grenoble Alpes, F-38000 Grenoble, France

[3] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[4] Univ Rouen, CNRS, UMR 6634, GPM, F-76801 St Etienne Du Rouvray, France

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 25期

关键词：

SPECIMEN PREPARATION; TECHNOLOGY; SILICON; PERFORMANCE; SI;

D O I：

10.1063/1.4989676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two types of industrial transistor technologies have been studied using atom probe tomography (APT). Both 14 nm node high-K metal-oxide-semiconductor field effect transistors (MOSFETs) on ultrathin body and buried oxide and 320 GHz Ft Si/SiGe Heterojunction Bipolar Transistors (HBT) embedded in a 55-nm BiCMOS chip have been analysed and their atomic distribution has been mapped. Due to the limitations of routine characterisation techniques, boron can remain invisible in such nanometric sized structures. Also, size effects can induce differences between the actual device and larger test zones used for monitoring these technologies. This paper presents results obtained by APT from two advanced nodes, in contrast to complementary techniques. Using different methodologies, including specific APT-friendly test structures and multiple-impact data filtering, the dopant behaviour in these structures can be better understood. An unexpected boron distribution in both the MOSFET source/drain and HBT base regions has been highlighted. Published by AIP Publishing.

引用

页数：5

共 45 条

[1]

[Anonymous], 1987, SECONDARY ION MASS S

[2] Boron observation in p-type silicon device by spherical aberration corrected scanning transmission electron microscope [J].

Asayama, Kyoichiro ;

Hashikawa, Naoto ;

Kajiwara, Kazuto ;

Yaguchi, Toshie ;

Konno, Mitsuru ;

Mori, Hirotaro .

APPLIED PHYSICS EXPRESS, 2008, 1 (07) :0740011-0740013

[3]

Avenier G., 2008, BIP BICM CIRC TECH M

[4] THE TOMOGRAPHIC ATOM-PROBE - A QUANTITATIVE 3-DIMENSIONAL NANOANALYTICAL INSTRUMENT ON AN ATOMIC-SCALE [J].

BLAVETTE, D ;

DECONIHOUT, B ;

BOSTEL, A ;

SARRAU, JM ;

BOUET, M ;

MENAND, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (10) :2911-2919

[5] Atom probe tomography: from physical metallurgy towards microelectronics [J].

Blavette, Didier ;

Duguay, Sebastien ;

Pareige, Philippe .

INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 2011, 102 (09) :1074-1081

[6] A 55 nm Triple Gate Oxide 9 Metal Layers SiGe BiCMOS Technology Featuring 320 GHz fT/370 GHz fMAX HBT and High-Q Millimeter-Wave Passives [J].

Chevalier, P. ;

Avenier, G. ;

Ribes, G. ;

Montagne, A. ;

Canderle, E. ;

Celi, D. ;

Derrier, N. ;

Deglise, C. ;

Durand, C. ;

Quemerais, T. ;

Buczko, M. ;

Gloria, D. ;

Robin, O. ;

Petitdidier, S. ;

Campidelli, Y. ;

Abbate, F. ;

Gros-Jean, M. ;

Berthier, L. ;

Chapon, J. D. ;

Leverd, F. ;

Jenny, C. ;

Richard, C. ;

Gourhant, O. ;

De-Buttet, C. ;

Beneyton, R. ;

Maury, P. ;

Joblot, S. ;

Favennec, L. ;

Guillermet, M. ;

Brun, P. ;

Courouble, K. ;

Haxaire, K. ;

Imbert, G. ;

Gourvest, E. ;

Cossalter, J. ;

Saxod, O. ;

Tavernier, C. ;

Foussadier, F. ;

Ramadout, B. ;

Bianchini, R. ;

Julien, C. ;

Ney, D. ;

Rosa, J. ;

Haendler, S. ;

Carminati, Y. ;

Borot, B. .

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,

[7] SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications [J].

Cressler, JD .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (05) :572-589

[8] Advance in multi-hit detection and quantization in atom probe tomography [J].

Da Costa, G. ;

Wang, H. ;

Duguay, S. ;

Bostel, A. ;

Blavette, D. ;

Deconihout, B. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2012, 83 (12)

[9] An improved reconstruction procedure for the correction of local magnification effects in three-dimensional atom-probe [J].

De Geuser, F. ;

Lefebvre, W. ;

Danoix, F. ;

Vurpillot, F. ;

Forbord, B. ;

Blavette, D. .

SURFACE AND INTERFACE ANALYSIS, 2007, 39 (2-3) :268-272

[10]

Dimoulas A., 2007, ADV GATE STACKS HIGH

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