Ultrafast Pump-Probe Microscopy on 2D Transition Metal Dichalcogenides

被引:4
作者
Boandoh, Stephen [1 ]
Hsiao, Fu-He [2 ]
Shin, Bongki [3 ]
Mack, Majvor [1 ]
Grote, Linus P. [1 ]
Wang, Rongbin [4 ,5 ]
Han, Yimo [3 ]
Lou, Jun [3 ]
Koch, Norbert [4 ,5 ,6 ]
Nickel, Norbert H. [1 ]
Luo, Chih-Wei [2 ,7 ,8 ,9 ]
Tsai, Yu-Tsung [1 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovoltaik, D-12489 Berlin, Germany
[2] Natl Yang Ming Chiao Tung Univ, Dept Elect, Hsinchu 30010, Taiwan
[3] Rice Univ, Mat Sci & NanoEngn Dept, Houston, TX 77005 USA
[4] Humboldt Univ, Inst Physik, D-12489 Berlin, Germany
[5] Humboldt Univ, IRIS Adlershof, D-12489 Berlin, Germany
[6] Helmholtz Zentrum Berlin Mat & Energie GmbH, Forschergruppe Hybride Mat Syst, D-12489 Berlin, Germany
[7] Natl Yang Ming Chiao Tung Univ, Inst Phys, Hsinchu 30010, Taiwan
[8] Natl Yang Ming Chiao Tung Univ, Ctr Emergent Funct Matter Sci, Hsinchu 30010, Taiwan
[9] Natl Synchrotron Radiat Res Ctr NSRRC, Hsinchu 30076, Taiwan
来源
ADVANCED PHOTONICS RESEARCH | 2022年 / 3卷 / 08期
关键词
carrier bleaching effect; carrier dynamic distribution; MoS2 and WS2; morphology; shape-dependent properties; ultrafast pump-probe; microscopy; MONO LAYER; MOS2; DEFECT; DYNAMICS; SPECTROSCOPY; IMPURITIES; ABSORPTION; MONOLAYERS; DOMAINS;
D O I
10.1002/adpr.202200046
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Although microscopic techniques have been used to characterize transition metal dichalcogenides (TMDs), direct observation of charge carrier dynamics distribution in TMDs with diverse shapes remains unexplored. Herein, ultrafast pump-probe microscopy (UPPM) is employed to reveal the carrier dynamics distribution in molybdenum disulfide (MoS2) and tungsten disulfide (WS2) monolayer of four shapes: triangular (t-MoS2), curved triangular (c-MoS2), triangular (t-WS2), and hexagonal (h-WS2). Monitoring the photon transmission T at 1.55 eV after pumping with a photon energy of 3.1 eV, a negative.T/ T occurs in t-MoS2 and c-MoS2, while a positive.T/ T is detected in t-WS2 and h-WS2 after 3-7 ps time evolution. This distinctive behavior is attributed to deep/shallow defects below the conduction band minimum (CBM) in MoS2 and WS2. Spatial-independent.T/ T is observed in tMoS2 and t-WS2, while the.T/ T in c-MoS2 has a rapid decay of photoexcited carriers at the vertices and curved edges. Additionally, a threefold symmetry of.T/ T is revealed in h-WS2, attributed to the dissimilar occupation of defect states near the h-WS2 CBM. This work paves the way for examining charge carrier dynamics of various shapes of TMDs and provides a unique microscopic method for studying the charge carrier dynamics in emerging TMDs heterostructures.
引用
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页数:8
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