Electron-Blocking and Oxygen Evolution Catalyst Layers by Plasma-Enhanced Atomic Layer Deposition of Nickel Oxide

被引:22
作者
Hufnagel, Alexander G. [1 ,2 ]
Henss, Ann-Kathrin [1 ,2 ]
Hoffmann, Ramona [1 ,2 ,6 ]
Zeman, Otto E. O. [1 ,2 ]
Haringer, Sebastian [1 ,2 ]
Fattakhova-Rohlfing, Dina [3 ,4 ,5 ]
Bein, Thomas [1 ,2 ]
机构
[1] Ludwig Maximilians Univ Munchen LMU, Dept Chem, Butenandtstr 5-13 E, D-81377 Munich, Germany
[2] Ludwig Maximilians Univ Munchen LMU, Ctr NanoSci CeNS, Butenandtstr 5-13 E, D-81377 Munich, Germany
[3] Forschungszentrum Julich, Inst Energy & Climate Res IEK 1, Mat Synth & Proc, Wilhelm Johnen Str, D-52425 Julich, Germany
[4] Univ Duisburg Essen, Fac Engn, Lotharstr 1, D-47057 Duisburg, Germany
[5] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CENIDE, Lotharstr 1, D-47057 Duisburg, Germany
[6] Muller BBM GmbH, Robert Koch Str 11, D-82152 Planegg, Germany
来源
ADVANCED MATERIALS INTERFACES | 2018年 / 5卷 / 16期
关键词
blocking layers; electrocatalysis; nickel oxide; plasma-enhanced atomic layer deposition; thin films; PEROVSKITE SOLAR-CELLS; THIN-FILMS; NIO FILMS; WATER OXIDATION; PERFORMANCE; METAL; OZONE; ELECTROCATALYSTS; NANOPARTICLES; TRANSPARENT;
D O I
10.1002/admi.201701531
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A plasma-enhanced atomic layer deposition (ALD) process is presented, capable of producing thin conformal films of nickel(II) oxide (NiO) on various substrates. Nickelocene (NiCp2) is used as an inexpensive metal precursor with oxygen plasma as the oxidant. The film growth rate saturates with both nickel precursor and plasma exposure. An ALD window is observed between 225 and 275 degrees C. Linear growth is achieved at 250 degrees C with a growth rate of 0.042 nm per cycle. The thickness is highly uniform and the surface roughness is below 1 nm rms for 52 nm thick films on Si(100). Substrates with aspect ratios up to 1:10 can be processed. As-deposited, the films consist of polycrystalline, cubic NiO, and are transparent over the entire visible range with an optical bandgap of 3.7 eV. The films consist of stoichiometric NiO and contain approximate to 1% of carbon impurities. Two promising applications of these films are showcased in renewable energy conversion and storage devices: The films are pinhole-free and exhibit excellent electron blocking capabilities, making them potential hole-selective contact layers in solar cells. Also, high electrocatalytic activity of ultrathin NiO films is demonstrated for the alkaline oxygen evolution reaction, especially in electrolytes containing Fe3+.
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页数:12
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