Microstructural Peculiarities Caused by Annealing in the Temperature-Sensitive Thick Films Based on Cu0.1Ni0.1Co1.6Mn1.2O4 Ceramics

被引：0
作者：
Klym, Halyna [1 ]
Hadzaman, Ivan [2 ]
Karbovnyk, Ivan [3 ]
机构：
[1] Lviv Polytech Natl Univ, Specialized Comp Syst Dept, Lvov, Ukraine
[2] Drohobych Ivan Franko State Pedag Univ, Phys Dept, Drogobych, Ukraine
[3] Ivan Franko Natl Univ Lviv, Elect & Comp Technol Dept, Lvov, Ukraine
来源：
2019 IEEE 39TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2019年
关键词：
thick films; ceramics; microstructure; temperature sensitivity; annealing; electrical resistance; ELECTRICAL-PROPERTIES; GAS SENSOR; THERMISTORS; STABILITY; EFFICIENT; ALUMINA;
D O I：
10.1109/elnano.2019.8783768
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microstructural peculiarities in comparison with electrical properties in the temperature-sensitive thick films based on Cu0.1Ni0.1Co1.6Mn1.2O4 ceramics before and after annealing (ageing test at 170 degrees C for 500 h) are investigated. It is shown that annealing of thick films results in diffusion of Ag from contact area in region of grain boundaries. Obtained thick films with stabile electrical properties can be used as temperature-sensitive elements micro- and nanoelectronics.
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页码：313 / 316
页数：4
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