Strain gradients in polycrystalline CdS thin films

被引:14
作者
Castro-Rodríguez, R [1 ]
Sosa, V
Oliva, AI
Iribarren, A
Peña, JL
Caballero-Briones, F
机构
[1] IPN Merida, CINVESTAV, Dept Appl Phys, Merida 97310, Yucatan, Mexico
[2] Univ La Habana, Inst Mat & Reactivos, DIEES, La Habana 10400, Cuba
[3] IPN, CICATA, ALTAMIRA, Altamira Tamaulipas 89600, Spain
关键词
cadmium sulfide; X-ray diffraction;
D O I
10.1016/S0040-6090(00)01079-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The strain gradient through an 800-nm thick CdS thin him, deposited on an ITO substrate by chemical bath deposition (CBD) has been analyzed by using grazing incidence X-ray diffraction (GIXD). The main X-ray diffraction peak found in the CdS him was separated in the cubic-(111) and hexagonal-(002) reflections by a multi-Gaussian fit. We measured the d-spacings of the h-(002) and c-(111) phases mixed in the CdS film as a function of the penetration depth of the incidence X-ray beam. Afterwards, we calculated their respective strain. Both the c-(111) and h-(002) strain tend gradually to reach a top value from the surface to the depth of the films. These strain magnitudes were correlated with the misfit parameter between the CdS [c-(111) and h-(002)] phases and the ITO substrate. From the experimental results we concluded that strain is therefore induced by the mismatch and by other effects, as grain size of the CdS him, and ITO substrate roughness. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:6 / 9
页数:4
相关论文
共 12 条
[1]   SOME PROPERTIES OF THIN-FILMS OF CHEMICALLY DEPOSITED CADMIUM-SULFIDE [J].
DANAHER, WJ ;
LYONS, LE ;
MORRIS, GC .
SOLAR ENERGY MATERIALS, 1985, 12 (02) :137-148
[2]  
*INT CTR DIFFR, 1997, 100454 PDF
[3]  
*INT CTR DIFFR, 1997, 411049 PDF
[4]   Optical and structural evidence of the grain-boundary influence on the disorder of polycrystalline CdTe films [J].
Iribarren, A ;
Castro-Rodríguez, R ;
Caballero-Briones, F ;
Peña, JL .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :2957-2959
[5]   GROWTH-KINETICS AND POLYMORPHISM OF CHEMICALLY DEPOSITED CDS FILMS [J].
KAUR, I ;
PANDYA, DK ;
CHOPRA, KL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) :943-948
[6]   EFFECTS OF AIR ANNEALING ON CHEMICALLY DEPOSITED CDS FILMS EXAMINED BY XPS AND XRD [J].
KOLHE, S ;
KULKARNI, SK ;
NIGAVEKAR, AS ;
SHARMA, SK .
SOLAR ENERGY MATERIALS, 1984, 10 (01) :47-54
[7]   Photoluminescence analysis of CdS thin films under phase transition [J].
LozadaMorales, R ;
ZelayaAngel, O .
THIN SOLID FILMS, 1996, 281 :386-389
[8]   Microstructural effects of thermal annealing on CdS films [J].
MendozaGalvan, A ;
Martinez, G ;
LozadaMorales, R .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3333-3337
[9]   CONVERSION OF CHEMICALLY DEPOSITED PHOTOSENSITIVE CDS THIN-FILMS TO N-TYPE BY AIR ANNEALING AND ION-EXCHANGE REACTION [J].
NAIR, MTS ;
NAIR, PK ;
ZINGARO, RA ;
MEYERS, EA .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1557-1564
[10]   MECHANISM OF CHEMICAL BATH DEPOSITION OF CADMIUM-SULFIDE THIN-FILMS IN THE AMMONIA-THIOUREA SYSTEM - IN-SITU KINETIC-STUDY AND MODELIZATION [J].
ORTEGABORGES, R ;
LINCOT, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (12) :3464-3473