Effects of precursor aging and post-deposition treatment time on photo-assisted sol-gel derived low-dielectric constant SiO2 thin film on Si

被引：7

作者：

Cheong, K. Y. ^{[1
]}

Jasni, F. A. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Elect Mat Res Grp, Sch Mat & Mineral Resources Engn, George Town 14300, Malaysia

来源：

MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 02期

关键词：

sol-gel; low-dielectric constant thin film; Fourier-transform infrared;

D O I：

10.1016/j.mejo.2006.11.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have reported the results of sot-gel derived low dielectric constant SiO2 treated with UV light as a function of precursor aging time and post-deposition UV exposure time. Filmetrics, Fourier-transform infrared, and scanning electron microscope were employed to characterize the films. Precursor aged for the longest time (4 days) has demonstrated the lowest refractive index, which can be related to reduction of dynamic dielectric constant (k(e)). However, when the UV exposure time increased, the k(e) value also increased. These observations have been explained in the text. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：227 / 230

页数：4

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