Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield

被引：6

作者：

Hao, Jianmin ^{[1
]}

Wang, Lijie ^{[1
]}

Feng, Bin ^{[1
]}

Wang, Xiangquan ^{[1
]}

Hong, Ying ^{[1
]}

Wu, Hua ^{[1
]}

Meng, Dalei ^{[1
]}

Guo, Junmin ^{[1
]}

Yan, Ruyue ^{[1
]}

机构：

[1] Tianjin Elect Mat Res Inst, Tianjin 300220, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 05期

关键词：

Silicon carbide; PVT growth; vanadium doping; semi-insulating; VANADIUM; DEFECTS; LEVEL;

D O I：

10.1007/s11664-009-1028-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physical vapor transport process for growing vanadium-doped 6H-SiC single crystals was developed. Some 2-inch 6H-SiC wafers with resistivity larger than 10(12) Omega cm were obtained. A yield of semi-insulating wafers of 89% for the whole ingot was achieved, which indicates that a decrease in the incorporation of nitrogen and control of the consumption of vanadium during the whole growth run was successful. The concentrations of vanadium N (V) and nitrogen N (N), determined by secondary-ion mass spectroscopy (SIMS), and the calculated relation of resistivity versus N (V)/N (N) helped us explore the reason for this high resistivity and high semi-insulating yield.

引用

页码：530 / 533

页数：4

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