Integrating high-k/metal gates: gate-first or gate-last?

被引：0
作者：
Hoffmann, Thomas Y. [1 ]
机构：
[1] IMEC, FEOL LOGICDRAM Res Program, Kapeldreef 75, B-3001 Louvain, Belgium
来源：
SOLID STATE TECHNOLOGY | 2010年 / 53卷 / 03期
关键词：
TECHNOLOGY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The introduction of novel gate stack materials (high-k/metal gate) has enabled the resumption of Moore's Law at the 45/32nm nodes, when conventional Poly/SiON gate stacks ran out of steam. However, different schemes to integrate those novel materials have been recently proposed, traditionally referred to as gate first and gate last. What are the integration options and challenges associated with the integration of such novel materials? What are the main electrical benefits of HK/MG? What is the application range for each of the two approaches. This article discusses these questions and other issues that come to the fore with this disruptive technology.
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页码：20 / +
页数：3
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