Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

被引：45

作者：

Schubert, Martin F. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Rensselaer Nanotechnol Ctr, Troy, NY 12180 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 03期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; EFFECTIVE-MASS APPROXIMATION; GAN; MICROSTRUCTURES; ALN;

D O I：

10.1103/PhysRevB.81.035303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The concept of interband tunnel junctions for wurtzite III-Nitride semiconductors based on polarization charges at heterointerfaces is introduced. Such polarization-charge tunnel junctions obviate the need for high n-type and p-type doping, which is a general requirement for conventional tunnel junctions and also is a significant challenge for large-band-gap III-nitride semiconductors. Transmission coefficients and current-voltage characteristics for GaN/AlN/GaN and AlN/GaN/AlN polarization-charge tunnel junctions are calculated using the k.p quantum-transmitting boundary method with an eight-band Hamiltonian with Burt-Foreman operator ordering. It is shown that polarization-charge tunnel junctions carry sufficient current to become viable components in future light-emitting devices.

引用

页数：8

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