Hole-injection-induced structural transformation of oxygen vacancy in α-quartz

被引：66

作者：

Oshiyama, A ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 2B期

关键词：

density functional theory SiO2; oxygen vacancy; bistability; charge state; stress induced leakage current;

D O I：

10.1143/JJAP.37.L232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge-state-dependent structural stability of oxygen vacancy in alpha-quartz is determined by using first-principles total-energy calculations. It is found that neutral and positively charged oxygen vacancies show bistability, and that a spontaneous structural transformation occurs for doubly positively and doubly negatively charged states. The structural transformation induces a new electron trap, possibly causing the degradation of SiO2 thin films.

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页码：L232 / L234

页数：3

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