Hole Mobility in Arbitrary Orientation/Typical Plane Uniaxially-Strained Si Materials

Uniaxial strain technology is an effective way to improve the performance of nano-scale CMOS devices. In this paper, the relationships between hole scattering rates and the magnitude of stress and the orientation in uniaxiallystrained Si were studied on the basis of the six-bands kp model, Fermi's golden rule and the theory of Boltzmann collision term approximation. Based on the model of hole effective masses and hole scattering rates, the models of hole mobility as a function of the magnitude of stress for arbitrary orientation/typical plane uniaxially-strained Si were established. Our analytic models and quantized results will provide significant theoretical reference for the understanding of strained materials physics and its design.