Phonon transport in silicon nanowires using a Full-Band Monte Carlo approach

被引：0

作者：

Larroque, J. ^{[1
]}

Saint-Martin, J. ^{[1
]}

Dollfus, P. ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

来源：

2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE) | 2014年

关键词：

phonon heat transport; Monte Carlo; Nanowire; SI; MODEL;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We show that with a Full-Band dispersion, the specific heat is closer to the experimental value than with an isotropic quadratic dispersion. So we use a Full-Band dispersion in the transport algorithm. A Monte Carlo algorithm has been developed to simulate phonon transport in silicon nanowire. It has been successfully used to simulate the thermal conductivity.

引用

页数：2

共 5 条

[1] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[2] INELASTIC-NEUTRON-SCATTERING STUDY OF PHONON EIGENVECTORS AND FREQUENCIES IN SI [J].

KULDA, J ;

STRAUCH, D ;

PAVONE, P ;

ISHII, Y .

PHYSICAL REVIEW B, 1994, 50 (18) :13347-13354

[3] Monte Carlo transient phonon transport in silicon and germanium at nanoscales [J].

Lacroix, D ;

Joulain, K ;

Lemonnier, D .

PHYSICAL REVIEW B, 2005, 72 (06)

[4] Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion [J].

Pop, E ;

Dutton, RW ;

Goodson, KE .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) :4998-5005

[5] ADIABATIC BOND CHARGE MODEL FOR PHONONS IN DIAMOND, SI, GE, AND ALPHA-SN [J].

WEBER, W .

PHYSICAL REVIEW B, 1977, 15 (10) :4789-4803

← 1 →