Preparation of bi-layered ferroelectric thin film by thermal MOCVD

被引：0
作者：
Funakubo, H
Nukaga, N
Ishikawa, K
Kokubun, H
Machida, H
Shinozaki, K
Mizutani, N
机构：
[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan
[2] TRI Chem Lab Inc, Yamanashi, Japan
[3] Tokyo Inst Technol, Tokyo 1528552, Japan
来源：
FERROELECTRICS | 1999年 / 232卷 / 1-4期
关键词：
Bi(CH3)(3); SrBi2Ta2O9; MOCVD;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SrBi2Ta2O9 thin films were prepared by metalorganic chemical vapor deposition(MOCVD) from Bi(CH3)(3) - Sr[Ta(O .C2H5)(6)](2), - O-2 system. Bi(CH3)(3) is liquid and take a higher vapor pressure and gas concentration stability than conventionally used Bi sources, Bi(C7H7)(3) and Bi(C6H5)(3). The single phase of SrBi2Ta2O9 film was successfully prepared at 670 degreesC on (111)Pt/Ti/SiO2/Si substrate. Epitaxially grown SrBi2Ta2O9 with c-axis orientation was also deposited on (100)SrTiO3 substrates at low temperature of 640 degreesC.
引用
收藏
页码：1003 / 1008
页数：6
相关论文
共 13 条
  • [1] Preparation and properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using flash-MOCVD
    Ami, T
    Hironaka, K
    Isobe, C
    Nagel, N
    Sugiyama, M
    Ikeda, Y
    Watanabe, K
    Machida, A
    Miura, K
    Tanaka, M
    [J]. METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF ELECTRONIC CERAMICS II, 1996, 415 : 195 - 200
  • [2] BUSKIRK PCV, 1996, JPN J APPL PHYS, V35, P2520
  • [3] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
    DEARAUJO, CAP
    CUCHIARO, JD
    MCMILLAN, LD
    SCOTT, MC
    SCOTT, JF
    [J]. NATURE, 1995, 374 (6523) : 627 - 629
  • [4] FUNAKUBO H, UNPUB JPN J APPL PHY
  • [5] The microstructure of SrBi2Ta2O9 films
    Gutleben, CD
    Ikeda, Y
    Isobe, C
    Machida, A
    Ami, T
    Hironaka, K
    Morita, E
    [J]. METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF ELECTRONIC CERAMICS II, 1996, 415 : 201 - 206
  • [6] MOCVD of SrBi2Ta2O9 for integrated ferroelectric capacitors
    Hendrix, BC
    Hintermaier, F
    Desrochers, DA
    Roeder, JF
    Bhandari, G
    Chappuis, M
    Baum, TH
    Van Buskirk, PC
    Dehm, C
    Fritsch, E
    Nagel, N
    Honlein, W
    Mazure, C
    [J]. FERROELECTRIC THIN FILMS VI, 1998, 493 : 225 - 230
  • [7] ISHIKAWA K, UNPUB JPN J APPL PHY
  • [8] Characteristics of ferroelectric SrBi2Ta2O9 thin films grown by ''Flash'' MOCVD
    Isobe, C
    Ami, T
    Hironaka, K
    Watanabe, K
    Sugiyama, M
    Nagel, N
    Katori, K
    Ikeda, Y
    Gutleben, CD
    Tanaka, M
    Yamoto, H
    Yagi, H
    [J]. INTEGRATED FERROELECTRICS, 1997, 14 (1-4) : 95 - 103
  • [9] LI T, 1996, P MAT RES SOC, V415, P189
  • [10] Li TK, 1996, APPL PHYS LETT, V68, P616, DOI 10.1063/1.116486
12