BIAS-TUNABLE ELECTRON-SPIN POLARIZATION IN HYBRID FERROMAGNETIC-SCHOTTKY-STRIPE AND SEMICONDUCTOR NANOSTRUCTURE

被引：5

作者：

Chen, Sai-Yan ^{[1
]}

Lu, Mao-Wang ^{[1
,2
]}

Tang, Yi ^{[1
]}

Zhang, Gui-Lian ^{[1
]}

机构：

[1] Xiangtan Univ, Coll Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China

[2] Hainan Normal Univ, Coll Phys & Elect Engn, Haikou 571158, Hainan, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2010年 / 24卷 / 11期

关键词：

Hybrid magnetic nanostructure; spintronics; spin polarization; SPINTRONICS; INJECTION;

D O I：

10.1142/S0217984910023116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, an electron-spin filter was proposed by depositing a nanosized ferromagnetic metal stripe and a Schottky normal metal stripe on the top of the semiconductor heterostructure [F. Zhai, H. Q. Xu and Y. Guo, Phys. Rev. B 70 (2004) 085308]. This device has a considerable electron-spin polarization and potential application in spintronics. Here we apply a bias to this device and theoretically demonstrate how to manipulate its electron-spin polarization. By numerical simulations, we found that not only the amplitude of the electron-spin polarization but also its sign varies with the bias, giving rise to a bias-tunable spin filter device.

引用

页码：1069 / 1077

页数：9

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