InGaAs/GaAs/InGaP quantum well laser with etched mirrors obtained by electron cyclotron resonance Plasma.

被引：0
|
作者：
Mestanza, SNM [1 ]
Von Zuben, AA [1 ]
Frateschi, NC [1 ]
Bettini, J [1 ]
de Carvalho, MMG [1 ]
机构：
[1] Univ Estadual Campinas, IFGW, DFA, LPD, BR-13083970 Campinas, SP, Brazil
来源：
1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS | 1999年
关键词：
laser; ECR; etched mirror;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs/GaAs quantum well lasers with InGaP cladding layer were grown by chemical beam epitaxy (CBE). Low transparency current of J(tr) = 150 A/cm(2) and optical loss of 50 cm(-1) were obtained for broad-area. lasers with conventional cleaved facets. Lasers with mirrors obtained by electron cyclotron resonance plasma (ECR) etching were fabricated. Threshold current of 200 and 325 mA were obtained for lasers 40 mum nide and cavity length of 300 and 200 mum, respectively.
引用
收藏
页码：13 / 15
页数：3
相关论文
共 50 条
  • [1] Electron cyclotron plasma etching damage investigated by InGaAs/GaAs quantum well photoluminescence
    Mestanza, S. N. M.
    Frateschi, N. C.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 2726 - 2730
  • [2] Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser
    Li J.-Y.
    Wang H.-L.
    Yang J.
    Cao C.-F.
    Zhao X.-Y.
    Yu W.-F.
    Gong Q.
    Faguang Xuebao/Chinese Journal of Luminescence, 2020, 41 (08): : 971 - 976
  • [3] Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers
    Tang Yu
    Cao Chunfang
    Zhao Xuyi
    Yang Jin
    Li Jinyou
    Gong Qian
    Wang Hailong
    LASER & OPTOELECTRONICS PROGRESS, 2019, 56 (13)
  • [4] Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser
    Feng, M.
    Holonyak, N., Jr.
    James, A.
    Cimino, K.
    Walter, G.
    Chan, R.
    APPLIED PHYSICS LETTERS, 2006, 89 (11)
  • [5] ULTRALOW DAMAGE DEPTH BY ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING OF GAAS/INGAAS QUANTUM-WELLS
    BICKL, T
    JACOBS, B
    STRAKA, J
    FORCHEL, A
    APPLIED PHYSICS LETTERS, 1993, 62 (10) : 1137 - 1139
  • [6] SIZE-DEPENDENT PHOTOLUMINESCENCE ENERGY AND INTENSITY OF SELECTIVE ELECTRON-CYCLOTRON RESONANCE-ETCHED STRAINED INGAAS/GAAS QUANTUM BOXES
    REED, JD
    CHEN, YP
    TENTARELLI, ES
    SCHAFF, WJ
    EASTMAN, LF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 995 - 999
  • [7] Fabrication of dry etched mirrors for In0.20Ga0.80As/GaAs waveguides using an electron cyclotron resonance source
    Ko, KK
    Kamath, K
    Zia, O
    Berg, E
    Pang, SW
    Bhattacharya, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2709 - 2713
  • [8] REFLECTOR ANTENNAS FOR ELECTRON CYCLOTRON RESONANCE HEATING OF FUSION PLASMA.
    Wada, Osami
    Nakajima, Masamitsu
    Space Power, 1985, 6 (03): : 213 - 220
  • [9] ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA-ETCHING OF IN0.2GA0.8AS-GAAS QUANTUM-WELL LASER STRUCTURES
    PEARTON, SJ
    HOBSON, WS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (09) : 948 - 951
  • [10] Ultralow laser threshold operation of InGaAs-GaAs-InGaP strained quantum well DFB and DBR lasers
    Sin, YK
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 1007 - 1012
12345