InGaAs/GaAs/InGaP quantum well laser with etched mirrors obtained by electron cyclotron resonance Plasma.

被引：0

作者：

Mestanza, SNM ^{[1
]}

Von Zuben, AA ^{[1
]}

Frateschi, NC ^{[1
]}

Bettini, J ^{[1
]}

de Carvalho, MMG ^{[1
]}

机构：

[1] Univ Estadual Campinas, IFGW, DFA, LPD, BR-13083970 Campinas, SP, Brazil

来源：

1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS | 1999年

关键词：

laser; ECR; etched mirror;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/GaAs quantum well lasers with InGaP cladding layer were grown by chemical beam epitaxy (CBE). Low transparency current of J(tr) = 150 A/cm(2) and optical loss of 50 cm(-1) were obtained for broad-area. lasers with conventional cleaved facets. Lasers with mirrors obtained by electron cyclotron resonance plasma (ECR) etching were fabricated. Threshold current of 200 and 325 mA were obtained for lasers 40 mum nide and cavity length of 300 and 200 mum, respectively.

引用

页码：13 / 15

页数：3

共 3 条

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