共 9 条
[4]
Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
2005, 23 (05)
:2046-2050
[5]
Morel V., 2016, PHYS SCR, pT167
[6]
Richou M., 2015, PHYS SCR, pT167
[8]
Ruset C., 2014, PHYS SCR, pT159