Recent experimental results from a CMOS active pixel image sensor with photodiode and photogate pixels

被引：2

作者：

Solhusvik, J ^{[1
]}

Cavadore, C ^{[1
]}

Audoux, FX ^{[1
]}

Verdier, N ^{[1
]}

Farre, J ^{[1
]}

StPe, O ^{[1
]}

Davancens, R ^{[1
]}

David, JP ^{[1
]}

机构：

[1] ECOLE NATL SUPER AERONAUT & ESPACE,DEPT ELECT,TOULOUSE,FRANCE

来源：

ADVANCED FOCAL PLANE ARRAYS AND ELECTRONIC CAMERAS | 1996年 / 2950卷

关键词：

D O I：

10.1117/12.262533

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An APS test circuit including three 32x32 arrays with photodiode and photogate pixels has been developed using a 1.2 mu m double-layer polysilicon double-layer metal CMOS process. The first experimental results have been published in the Aerosense conference in Orlando (April 1996). In this paper we present the latest experimental results including radiation hardness, quantum efficiency and spot scan pixel sensitivity.

引用

页码：18 / 24

页数：7