Fabrication Characteristics of Silicon Nanowires via the Electrochemical Electroless Etching Method

被引:4
|
作者
Kang, ByeongSu [1 ]
Jeong, Chae Hwan [1 ]
Kim, Changheon [1 ]
Kim, Min-Young [1 ]
Choi, Bum Ho [1 ]
Lee, Moo Sung [2 ]
Kim, Ho-Sung [1 ]
机构
[1] Korea Inst Ind Technol KITECH, Kwangju 500480, South Korea
[2] Chonnam Natl Univ, Kwangju 500757, South Korea
关键词
Solar Cell; Nanowire Structure; Electroless Coating; Electrical Etching; Silicon; PHOTOLUMINESCENCE; NANOPARTICLES; NANOHOLES; CATALYST; ARRAYS; SI;
D O I
10.1166/jnn.2015.10357
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A silicon nanowire structure was fabricated using the electrochemical electroless etching method, involving electroless plating and the electrochemical etching process. The reflection of the absorption layer with the nanowires' structure was about 5%, which is better thana bulk-type solar cell (10%).
引用
收藏
页码:5291 / 5294
页数:4
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