Selective wet-etching of amorphous/crystallized Ag-As-S and Ag-As-S-Se chalcogenide thin films

被引:13
作者
Orava, J.
Wagner, T.
Krbal, M.
Kohoutek, T.
Vlcek, Mil.
Benes, L.
Kotulanova, E.
Bezdicka, P.
Klapetek, P.
Frumar, M.
机构
[1] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Pardubice 53210, Czech Republic
[2] Univ Pardubice, Joint Lab Solid State Chem, Pardubice 53210, Czech Republic
[3] Univ Pardubice, Acad Sci Czech Republ, Inst Macromol Chem, Pardubice 53210, Czech Republic
[4] Acad Sci Czech Republic, Inst Inorgan Chem, CZ-25068 Rez, Czech Republic
[5] Czech Metrol Inst, Brno 63800, Czech Republic
关键词
chalcogenides; amorphous materials; quasicrystals; thin films; surface properties;
D O I
10.1016/j.jpcs.2007.03.056
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The paper is focused on the possibilities of selective wet etching of optically and thermally crystallized /amorphous Ag-doped chalcogenide thin films, namely Ag-x(As0.33S0.67)(100-x) and Ag-x(As0.33S0.335Se0.335)(100-x). The selective etching of optically(thermally) crystallized Ag-x(As0.33S0.67)(100-x) and thermally crystallized Ag-x(As0.33S0.335Se0.335)(100-x) thin films in water solution of NaCN is presented. The good surface quality is an important and crucial parameter for optical elements fabrication (e.g. grids, waveguides, etc.) especially in nanometer dimensions. The selective etching of undoped and Ag optically doped region was also carried out to observe surface roughness of doped region before and after selective etching. Characterization of the structure and surface of studied films by Raman spectroscopy, X-ray diffraction, AFM and SEM methods has been done and potential application suggested. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1008 / 1013
页数:6
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