Resonant magnetotunneling of photogenerated holes in double barrier structures

被引：2

作者：

Vercik, A

Gobato, YG ^{[1
]}

Bittencourt, ACR

Marques, GE

Brasil, MJSP

Trallero-Giner, C

机构：

[1] Univ Fed Sao Carlos, Dept Fis, BR-13560970 Sao Carlos, SP, Brazil

[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, Grp Propriedades Opt, BR-13083970 Campinas, SP, Brazil

[3] Univ La Habana, Dept Fis Teor, Vedado 10400, Cuba

[4] Univ Fed Santa Catarina, Florianopolis, SC, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 09期

关键词：

Band structure - Electric field effects - Magnetic field effects - Photocurrents - Semiconductor diodes;

D O I：

10.1063/1.1563057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we report on a technique-namely, the photoinduced magnetotunneling technique-which allows the direct experimental observation of tunneling of holes through valence-band Landau levels in n-i-n double-barrier resonant tunneling structures. Photocurrent-voltage curves exhibit several peaks associated with the complex nature of the dispersion of holes under parallel electric and magnetic fields applied to the sample. (C) 2003 American Institute of Physics.

引用

收藏

页码：5830 / 5832

页数：3

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