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Thienoacene dimers based on the thieno[3,2-b] thiophene moiety: synthesis, characterization and electronic properties
被引:66
作者:
Niebel, Claude
[1
]
Kim, Yeongin
[2
]
Ruzie, Christian
[1
]
Karpinska, Jolanta
[1
]
Chattopadhyay, Basab
[1
]
Schweicher, Guillaume
[1
]
Richard, Audrey
[1
]
Lemaur, Vincent
[4
]
Olivier, Yoann
[4
]
Cornil, Jerome
[4
]
Kennedy, Alan R.
[5
]
Diao, Ying
[3
]
Lee, Wen-Ya
[3
]
Mannsfeld, Stefan
[6
]
Bao, Zhenan
[3
]
Geerts, Yves H.
[1
]
机构:
[1] Univ Libre Bruxelles, Polymer Chem Lab, B-1050 Brussels, Belgium
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[4] Univ Mons, Serv Chim Mat Nouveaux, B-7000 Mons, Belgium
[5] Univ Strathclyde, Dept Pure & Appl Chem, Glasgow G1 1XL, Lanark, Scotland
[6] Tech Univ Dresden, Ctr Adv Elect Dresden, D-01062 Dresden, Germany
关键词:
FIELD-EFFECT TRANSISTORS;
THIN-FILM TRANSISTORS;
SELF-ASSEMBLED MONOLAYERS;
ENERGY-LEVEL ALIGNMENT;
ORGANIC SEMICONDUCTORS;
CHARGE-TRANSPORT;
CONTACT RESISTANCE;
HIGH-PERFORMANCE;
SINGLE-CRYSTALS;
LIQUID-CRYSTALS;
D O I:
10.1039/c4tc02158d
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Two thienoacene dimers based on the thieno[3,2-b] thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm(2) V-1 s(-1).
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页码:674 / 685
页数:12
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