New liquid phase and metal-insulator transition in Si MOSFETs

被引：94

作者：

He, S ^{[1
]}

Xie, XC

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.80.3324

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the liquid phase through the disorder landscape in the system below the liquid-gas critical temperature. The consequences of our theory are discussed for variety of physical properties relevant to the recent experiments.

引用

页码：3324 / 3327

页数：4

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