Study on sulfur diffusion in CuInSe2 thin films using two thermal profiles

被引:7
作者
Yoosuf, Rahana [1 ]
Jayaraj, M. K. [1 ]
机构
[1] Cochin Univ Sci & Technol, Dept Phys, Optoelect Device Lab, Cochin 682022, Kerala, India
关键词
copper indium selenide; selenisation; two-stage process; chalcogenisation;
D O I
10.1016/j.tsf.2006.12.059
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An insurmountable disadvantage of CuInSe2 is the low band gap, which limits the open-circuit voltage to value well below 500 mV in solar cells. The incorporation of sulfur into CuInSe2 thin film was investigated to establish a scientific basis for the graded band gap CuIn(Se1-x,S-x)(2) thin films. CuIn(Se1-x,S-x)(2) thin films were obtained by reactive annealing of Cu11In9 precursors in a mixture of sulfur and selenium atmosphere while post-sulfurization of single phase CuInSe2 did not result in CuIn(Se1-x,S-x)(2) thin films. A band gap of 1.36 eV, was obtained for the prepared CuIn(Se1-x,S-x)(2). (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:6188 / 6191
页数:4
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