An Ultra-Low-Power Dual-Polarization Transceiver Front-End for 94-GHz Phased Arrays in 130-nm InP HBT

被引：22

作者：

Kim, Seong-Kyun ^{[1
]}

Maurer, Robert ^{[1
]}

Simsek, Arda ^{[1
]}

Urteaga, Miguel ^{[2
]}

Rodwell, Mark J. W. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Teledyne Sci & Imaging, Thousand Oaks, CA 91360 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2017年 / 52卷 / 09期

关键词：

InP HBT; millimeter-wave integrated circuits; phased arrays; receivers; transceivers; transmitters; AMPLIFIER; RECEIVER;

D O I：

10.1109/JSSC.2017.2713528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a fully integrated 94-GHz transceiver front-end in a 130-nm/1.1-THz f(max) InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5-V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21-dB gain, <9.3-dB noise figure, and consumes 39 mW, while in transmitting mode with time-duplexed vertical and horizontal outputs, the transceiver front-end achieves 5-dBm output power, 22-dB gain, and consumes 40 mW. At 1-V collector bias, in dual-polarization simultaneous receiving mode, the IC has 22.7-dB gain, <8.9-dB noise figure, and consumes 26 mW, while in transmitting mode, it has 22-dB gain and the saturated output power of 1.4 dBm with 29-mW power consumption.

引用

页码：2267 / 2276

页数：10

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