Strain-induced step bunching in orientation-controlled GaN on Si

被引:3
作者
Narita, Tetsuo [1 ]
Iguchi, Hiroko [1 ]
Horibuchi, Kayo [1 ]
Otake, Nobuyuki [2 ]
Hoshi, Shinichi [2 ]
Tomita, Kazuyoshi [1 ]
机构
[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801118, Japan
[2] Denso Corp, Nisshin, Aichi 4700111, Japan
关键词
SURFACE; GROWTH; HETEROSTRUCTURES; REDUCTION; FILMS;
D O I
10.7567/JJAP.55.05FB01
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a technique for the fabrication of high-quality GaN-on-silicon (Si) substrates for use in various power applications. GaN epitaxial layers were generated on Si(111) vicinal faces that had been previously covered with a thin coating of Al2O3 to control the orientation of the AlN seed layers. We obtained orientation-controlled GaN layers and found a linear relationship between the GaN c-axis and Si[111] tilt angles. As a result, the threading dislocation density in the AlN seed layer was reduced and high-quality GaN layers were generated. The X-ray rocking curves for these layers exhibited full width at half maximum values of 390'' and 550'' for the (004) and (114) reflections, respectively. Significant step bunching was observed on a GaN(0001) vicinal face produced using this technique, attributed to strain-induced attractive interactions between steps. Thus, by controlling the strain near the surface layer, we achieved the step flow growth of GaN on Si. (C) 2016 The Japan Society of Applied Physics
引用
收藏
页数:7
相关论文
共 36 条
  • [1] The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
    Baron, N.
    Cordier, Y.
    Chenot, S.
    Vennegues, P.
    Tottereau, O.
    Leroux, M.
    Semond, F.
    Massies, J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)
  • [2] AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
    Cheng, Kai
    Leys, M.
    Derluyn, J.
    Balachander, K.
    Degroote, S.
    Germain, M.
    Borghs, G.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1600 - 1602
  • [3] High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
    Cheng, Kai
    Leys, M.
    Degroote, S.
    Germain, M.
    Borghs, G.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (19)
  • [4] Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness
    Dadgar, A
    Bläsing, J
    Diez, A
    Alam, A
    Heuken, M
    Krost, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11B): : L1183 - L1185
  • [5] Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer
    Fang, H.
    Takaya, Y.
    Ohuchi, S.
    Miyake, H.
    Hiramatsu, K.
    Asamura, H.
    Kawamura, K.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 550 - 553
  • [6] Strain relaxation in AlGaN multilayer structures by inclined dislocations
    Follstaedt, D. M.
    Lee, S. R.
    Allerman, A. A.
    Floro, J. A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)
  • [7] Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy
    Fritze, S.
    Drechsel, P.
    Stauss, P.
    Rode, P.
    Markurt, T.
    Schulz, T.
    Albrecht, M.
    Blaesing, J.
    Dadgar, A.
    Krost, A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (12)
  • [8] Reduction of threading dislocation by recoating GaN island surface with SiN for high-efficiency GaN-on-Si-based LED
    Hikosaka, Toshiki
    Yoshida, Hisashi
    Sugiyama, Naoharu
    Nunoue, Shinya
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4): : 617 - 620
  • [9] Thermal stability of GaN on (111) Si substrate
    Ishikawa, H
    Yamamoto, K
    Egawa, T
    Soga, T
    Jimbo, T
    Umeno, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 178 - 182
  • [10] Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN
    Jindal, Vibhu
    Shahedipour-Sandvik, Fatemeh
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)