Characterization of Doped BST Thin Films Deposited by Sol-Gel for Tunable Microwave Devices

被引：18

作者：

Khalfallaoui, Abderrazek ^{[1
]}

Velu, Gabriel ^{[1
]}

Burgnies, Ludovic ^{[1
]}

Carru, Jean-Claude ^{[1
]}

机构：

[1] Univ Littoral Cote dOpale, Lab Etud Mat & Composants Elect, F-62228 Calais, France

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2010年 / 57卷 / 05期

关键词：

ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; LASER DEPOSITION; CAPACITOR; DECOMPOSITION; FABRICATION; VARACTORS; LA;

D O I：

10.1109/TUFFC.2010.1514

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

BST thin films with various dopants were grown by the sol-gel method on platinized silicon and MgO substrates. Their dielectric properties were investigated at low frequency (up to 1 MHz) on silicon with parallel-plate capacitors and at high frequency (up to 15 GHz) with interdigitated capacitors on MgO substrate. The results depend on the nature of the dopant and show that Mg is a very good candidate to reduce dielectric losses. On the other hand, K is a good candidate as dopant of BST thin film to drastically increase the tunability.

引用

页码：1029 / 1033

页数：5

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