Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO

被引：17

作者：

Li, C. X. ^{[1
]}

Lai, P. T. ^{[1
]}

Xu, J. P. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期

基金：

中国国家自然科学基金;

关键词：

high-k dielectric; Ge MOS; pretreatment; capacitance-voltage characterization; ELECTRICAL-PROPERTIES;

D O I：

10.1016/j.mee.2007.04.049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality Ge MOS capacitors with HMON as high-k gate dielectric are fabricated by using Ge surface pretreatment in wet NH3, N2O, NO and N-2 ambients. The wet-NO pretreatment is found to be the best for improving the reliability properties of the Ge MOS capacitor, with smallest increases of interface-state density, leakage current and flat-band voltage after electrical stress.

引用

页码：2340 / 2343

页数：4

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