Atomic and molecular processes on Si(001) and Si(111) surfaces

被引：12

作者：

Terakura, K ^{[1
]}

Yamasaki, T ^{[1
]}

Uda, T ^{[1
]}

Stich, I ^{[1
]}

机构：

[1] JRCAT,ANGSTROM TECHNOL PARTNERSHIP,TSUKUBA,IBARAKI 305,JAPAN

来源：

SURFACE SCIENCE | 1997年 / 386卷 / 1-3期

关键词：

computer simulations; density functional calculations; epitaxy; low index single crystal surfaces; molecular dynamics; silicon; surface diffusion; surface waves;

D O I：

10.1016/S0039-6028(97)00315-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Despite the fact that remarkable progress has been made in the determination of the static atomic structures of Si surfaces, the kinetic and dynamic aspects of these surfaces are not yet well understood. A brief review is given on the theoretical studies of kinetic and dynamic properties based on first-principles computer simulations, focusing on the initial stage of homoepitaxial crystal growth on Si(001) and the low-temperature dynamics of Si(111)-7 x 7. (C) 1997 Elsevier Science B.V.

引用

页码：207 / 215

页数：9

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