Improve the properties of n-ZnO/p-Si heterojunction by CuSCN buffer layer

被引：0

作者：

Xiong, Chao ^{[1
]}

Chen, Lei ^{[1
]}

Du, Wenhan ^{[1
]}

Ma, Jinxiang ^{[1
]}

Xiao, Jin ^{[1
]}

Zhu, Xifang ^{[1
]}

机构：

[1] Changzhou Inst Technol, Sch Elect & Photoelect Engn, Changzhou 213032, Jiangsu, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2017年 / 31卷 / 16-19期

基金：

中国国家自然科学基金;

关键词：

n-ZnO/p-Si heterojunction; ZnO films; CuSCN; interface states;

D O I：

10.1142/S0217979217440763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Due to the mismatch between ZnO film and p-Si lattice, there are a large number of interface states which seriously affect the photoelectric properties of ZnO/p-Si heterojunction optoelectronic devices. In this research, ZnO thin films were deposited on p-Si by magnetron sputtering and ZnO/p-Si heterojunction was prepared. CuSCN film buffer layer was inserted into the interface of ZnO/p-Si heterojunction to reduce the interface state and improve the electric properties of heterojunction. The results show that the insertion of CuSCN films can effectively improve the interface state of ZnO/p-Si heterojunction, increase the forward current, reduce the reverse current and improve the heterojunction rectification ratio.

引用

页数：5

共 10 条

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