Novel Low Melting Point Barium and Strontium Precursors for the MOCVD Growth of Barium-Strontium-Titanate Films

被引:13
作者
Kuzmina, Natalia [1 ]
Malkerova, Irina [2 ]
Alikhanyan, Andrey [2 ]
Tsymbarenko, Dmitry [1 ]
Lyssenko, Konstantin [3 ]
Kreinin, Oleg [4 ]
Shuster, Gregory [4 ]
Lakin, Evgeny [4 ]
Zolotoyabko, Emil [4 ]
机构
[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119991, Russia
[2] NS Kurnakov Gen & Inorgan Chem Inst, Moscow 119991, Russia
[3] AN Nesmeyanov Organoelement Cpds Inst, Moscow 119991, Russia
[4] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel
关键词
beta-diketonates; Barium-strontium titanate; Epitaxial films; MOCVD; Volatile precursors; CHEMICAL-VAPOR-DEPOSITION; BATIO3; THIN-FILMS; X-RAY CRYSTAL; DIELECTRIC-CONSTANT; POLYETHER ADDUCTS; VOLATILE; MGO; FABRICATION; CAPACITORS; COMPLEXES;
D O I
10.1002/cvde.200906786
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Novel barium and strontium precursors, belonging to the family of volatile complexes of the alkaline earth element (AEE) fluorinated beta-diketonates with polyglymes, [M(dfhd)(2)(tetraglyme)] [Hdfnd = 1,1,1,2,2,6,6,7,7,7-dekafluro-heptane-3,5-dione, M = Ba (I), Sr (II)], are synthesized and tested with an aim to use them for metal-organic (MO)CVD of BaxSr1-xTiO3 (BST) thin films. The thermal behavior and composition of vapor phases for compounds I and 11 are studied by thermal analysis and mass spectrometry (MS). Considerable reduction of the melting point (down to 80-90 degrees C) for both compounds I and II, as compared to known volatile complexes, is achieved. By means of the developed precursors, epitaxial BST films (x = 0.5) are grown on SrTiO3 substrates by using the modified MOCVD facility. The quality of the grown films is examined by high-resolution (HR) X-ray diffraction (XRD) and high-resolution (HR) scanning electron microscopy (SEM).
引用
收藏
页码:342 / 349
页数:8
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