The atomic-scale modeling of dislocation-obstacle interactions in irradiated metals

被引:20
作者
Bacon, D. J.
Osetsky, Yu. N.
机构
[1] Univ Liverpool, Dept Engn, Liverpool L69 3GH, Merseyside, England
[2] Oak Ridge Natl Lab, Comp Sci & Math Div, Oak Ridge, TN USA
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1007/s11837-007-0053-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Irradiation of metals with high-energy particles produces nano-scale defect clusters such as voids, dislocation loops, stacking-fault tetrahedra, and irradiation-induced precipitates. They are obstacles to dislocation glide and give rise to hardening and, in some conditions, deformation localization. Atomic-scale computer simulation has been developed to provide detailed information on how obstacle structure, stress, strain rate, and temperature influence these effects. Some recent results of modeling dislocations gliding under stress against obstacles in a variety of metals across a range of temperatures are considered. The effects observed include obstacle cutting, absorption, and drag. Although some processes can be represented within the continuum treatment of crystal defects, others cannot.
引用
收藏
页码:40 / 45
页数:6
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